| PART |
Description |
Maker |
| S6304 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S4101 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4103 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2206 S2206-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4002 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4001 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| APT2X60DC120J APT2X61DC120J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
